Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / HGTP10N120BN
Part Number | HGTP10N120BN |
Datasheet | HGTP10N120BN datasheet |
Description | IGBT 1200V 35A 298W TO220AB |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Not For New Designs |
IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 35A |
Current - Collector Pulsed (Icm) | 80A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
Power - Max | 298W |
Switching Energy | 320µJ (on), 800µJ (off) |
Input Type | Standard |
Gate Charge | 100nC |
Td (on/off) @ 25°C | 23ns/165ns |
Test Condition | 960V, 10A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220-3 |