
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SQ4425EY-T1_GE3

| Part Number | SQ4425EY-T1_GE3 |
| Datasheet | SQ4425EY-T1_GE3 datasheet |
| Description | MOSFET P-CHANNEL 30V 18A 8SOIC |
| Manufacturer | Vishay Siliconix |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 12 mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3630pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 6.8W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |