Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / RJK0601DPN-E0#T2
Part Number | RJK0601DPN-E0#T2 |
Datasheet | RJK0601DPN-E0#T2 datasheet |
Description | MOSFET N-CH 60V 110A TO220 |
Manufacturer | Renesas Electronics America |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 110A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.1 mOhm @ 55A, 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 141nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 10000pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 200W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |