Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Arrays / DD800S17H4B2BOSA2
Part Number | DD800S17H4B2BOSA2 |
Datasheet | DD800S17H4B2BOSA2 datasheet |
Description | IGBT MODULE VCES 1700V 800A |
Manufacturer | Infineon Technologies |
Series | - |
Part Status | Active |
Diode Configuration | 2 Independent |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 1700V |
Current - Average Rectified (Io) (per Diode) | - |
Voltage - Forward (Vf) (Max) @ If | 2.1V @ 800A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 900A @ 900V |
Operating Temperature - Junction | -40°C ~ 150°C |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | AG-IHMB130-1 |