Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXFT80N10Q
Part Number | IXFT80N10Q |
Datasheet | IXFT80N10Q datasheet |
Description | MOSFET N-CH 100V 80A TO-268 |
Manufacturer | IXYS |
Series | HiPerFET™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id | 4V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 360W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-268 |
Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |