Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRF60B217
Part Number | IRF60B217 |
Datasheet | IRF60B217 datasheet |
Description | MOSFET N-CH 60V 60A |
Manufacturer | Infineon Technologies |
Series | StrongIRFET™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 36A, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 66nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2230pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 83W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |