Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / IRD3CH101DB6
Part Number | IRD3CH101DB6 |
Datasheet | IRD3CH101DB6 datasheet |
Description | DIODE GEN PURP 1.2KV 200A DIE |
Manufacturer | Infineon Technologies |
Series | - |
Part Status | Obsolete |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 1200V |
Current - Average Rectified (Io) | 200A |
Voltage - Forward (Vf) (Max) @ If | 2.7V @ 200A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 360ns |
Current - Reverse Leakage @ Vr | 3.6µA @ 1200V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Die |
Operating Temperature - Junction | -40°C ~ 175°C |