Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN2706JE(TE85L,F)

Product Introduction

RN2706JE(TE85L,F)

Part Number
RN2706JE(TE85L,F)
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
TRANS 2PNP PREBIAS 0.1W ESV
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
4193pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number RN2706JE(TE85L,F)
Datasheet RN2706JE(TE85L,F) datasheet
Description TRANS 2PNP PREBIAS 0.1W ESV
Manufacturer Toshiba Semiconductor and Storage
Series -
Part Status Discontinued at Digi-Key
Transistor Type 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-553
Supplier Device Package ESV

Latest Products for Transistors - Bipolar (BJT) - Arrays, Pre-Biased

PBLS4002D,115

Nexperia USA Inc.

TRANS NPN PREBIAS/PNP 0.6W 6TSOP

PIMC31F

Nexperia USA Inc.

PIMC31/SOT457/SC-74

PIMD3F

Nexperia USA Inc.

PIMD3/SOT457/SC-74

RN1963(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

RN1965(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

RN1968(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6