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Part Number | BAS516,L3F |
Datasheet | BAS516,L3F datasheet |
Description | DIODE GEN PURP 100V 250MA ESC |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 100V |
Current - Average Rectified (Io) | 250mA |
Voltage - Forward (Vf) (Max) @ If | 1.25V @ 150mA |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 3ns |
Current - Reverse Leakage @ Vr | 200nA @ 80V |
Capacitance @ Vr, F | 0.35pF @ 0V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | SC-79, SOD-523 |
Supplier Device Package | ESC |
Operating Temperature - Junction | 150°C (Max) |