Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / RDD020N60TL
Part Number | RDD020N60TL |
Datasheet | RDD020N60TL datasheet |
Description | MOSFET N-CH 600V 2A CPT3 |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 20W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | CPT3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |