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Product Introduction

NTMD6601NR2G

Part Number
NTMD6601NR2G
Manufacturer/Brand
ON Semiconductor
Description
MOSFET 2N-CH 80V 1.1A 8SOIC
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
9729pcs Stock Available.

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Product Specifications

Part Number NTMD6601NR2G
Datasheet NTMD6601NR2G datasheet
Description MOSFET 2N-CH 80V 1.1A 8SOIC
Manufacturer ON Semiconductor
Series -
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 1.1A
Rds On (Max) @ Id, Vgs 215 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Power - Max 600mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC

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