Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / NTMD6601NR2G
Part Number | NTMD6601NR2G |
Datasheet | NTMD6601NR2G datasheet |
Description | MOSFET 2N-CH 80V 1.1A 8SOIC |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 1.1A |
Rds On (Max) @ Id, Vgs | 215 mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
Power - Max | 600mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOIC |