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| Part Number | IRF6216TRPBF | 
| Datasheet | IRF6216TRPBF datasheet | 
| Description | MOSFET P-CH 150V 2.2A 8-SOIC | 
| Manufacturer | Infineon Technologies | 
| Series | HEXFET® | 
| Part Status | Active | 
| FET Type | P-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 150V | 
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) | 
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 
| Rds On (Max) @ Id, Vgs | 240 mOhm @ 1.3A, 10V | 
| Vgs(th) (Max) @ Id | 5V @ 250µA | 
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V | 
| Vgs (Max) | ±20V | 
| Input Capacitance (Ciss) (Max) @ Vds | 1280pF @ 25V | 
| FET Feature | - | 
| Power Dissipation (Max) | 2.5W (Ta) | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Supplier Device Package | 8-SO | 
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |