Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / IXYK100N65B3D1
Part Number | IXYK100N65B3D1 |
Datasheet | IXYK100N65B3D1 datasheet |
Description | IGBT |
Manufacturer | IXYS |
Series | XPT™, GenX3™ |
Part Status | Active |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 225A |
Current - Collector Pulsed (Icm) | 460A |
Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 70A |
Power - Max | 830W |
Switching Energy | 1.27mJ (on), 2mJ (off) |
Input Type | Standard |
Gate Charge | 168nC |
Td (on/off) @ 25°C | 29ns/150ns |
Test Condition | 400V, 50A, 3 Ohm, 15V |
Reverse Recovery Time (trr) | 37ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-264-3, TO-264AA |
Supplier Device Package | TO-264 |