Product Introduction
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Product Specifications
Part Number |
IRFHS9301TRPBF |
Datasheet |
IRFHS9301TRPBF datasheet |
Description |
MOSFET P-CH 30V 6A PQFN |
Manufacturer |
Infineon Technologies |
Series |
HEXFET® |
Part Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30V |
Current - Continuous Drain (Id) @ 25°C |
6A (Ta), 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
37 mOhm @ 7.8A, 10V |
Vgs(th) (Max) @ Id |
2.4V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs |
13nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
580pF @ 25V |
FET Feature |
- |
Power Dissipation (Max) |
2.1W (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
6-PQFN (2x2) |
Package / Case |
6-PowerVDFN |
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