
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2SA1013-O,T6MIBF(J

| Part Number | 2SA1013-O,T6MIBF(J |
| Description | TRANS PNP 1A 160V TO226-3 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Part Status | Obsolete |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 160V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 200mA, 5V |
| Power - Max | 900mW |
| Frequency - Transition | 50MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Supplier Device Package | TO-92L |