Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPI90N06S4L04AKSA2
Part Number | IPI90N06S4L04AKSA2 |
Datasheet | IPI90N06S4L04AKSA2 datasheet |
Description | MOSFET N-CH 60V 80A TO262-3 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3.7 mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 13000pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3-1 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |