Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SQM120N10-09_GE3
Product Introduction
SQM120N10-09_GE3
- Part Number
- SQM120N10-09_GE3
- Manufacturer/Brand
- Vishay Siliconix
- Description
- MOSFET N-CH 100V 120A TO263
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- Automotive, AEC-Q101, TrenchFET®
- Quantity
- 8122pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | SQM120N10-09_GE3 |
| Datasheet | SQM120N10-09_GE3 datasheet |
| Description | MOSFET N-CH 100V 120A TO263 |
| Manufacturer | Vishay Siliconix |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8645pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D²Pak) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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