Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / GP2M002A065FG
Part Number | GP2M002A065FG |
Description | MOSFET N-CH 650V 1.8A TO220F |
Manufacturer | Global Power Technologies Group |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.6 Ohm @ 900mA, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 353pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 17.3W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |