
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI5471DC-T1-GE3

| Part Number | SI5471DC-T1-GE3 | 
| Datasheet | SI5471DC-T1-GE3 datasheet | 
| Description | MOSFET P-CH 20V 6A 1206-8 | 
| Manufacturer | Vishay Siliconix | 
| Series | TrenchFET® | 
| Part Status | Active | 
| FET Type | P-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 20V | 
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | 
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 9.1A, 4.5V | 
| Vgs(th) (Max) @ Id | 1.1V @ 250µA | 
| Gate Charge (Qg) (Max) @ Vgs | 96nC @ 10V | 
| Vgs (Max) | ±12V | 
| Input Capacitance (Ciss) (Max) @ Vds | 2945pF @ 10V | 
| FET Feature | - | 
| Power Dissipation (Max) | 2.5W (Ta), 6.3W (Tc) | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Supplier Device Package | 1206-8 ChipFET™ | 
| Package / Case | 8-SMD, Flat Lead |