
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / PEMD2,115

| Part Number | PEMD2,115 | 
| Datasheet | PEMD2,115 datasheet | 
| Description | TRANS PREBIAS NPN/PNP SOT666 | 
| Manufacturer | Nexperia USA Inc. | 
| Series | - | 
| Part Status | Active | 
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | 
| Current - Collector (Ic) (Max) | 100mA | 
| Voltage - Collector Emitter Breakdown (Max) | 50V | 
| Resistor - Base (R1) | 22 kOhms | 
| Resistor - Emitter Base (R2) | 22 kOhms | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V | 
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA | 
| Current - Collector Cutoff (Max) | 1µA | 
| Frequency - Transition | - | 
| Power - Max | 300mW | 
| Mounting Type | Surface Mount | 
| Package / Case | SOT-563, SOT-666 | 
| Supplier Device Package | SOT-666 |