Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXFH9N80Q
Part Number | IXFH9N80Q |
Datasheet | IXFH9N80Q datasheet |
Description | MOSFET N-CH 800V 9A TO-247 |
Manufacturer | IXYS |
Series | HiPerFET™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.1 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 180W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AD (IXFH) |
Package / Case | TO-247-3 |