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Product Introduction

NDD60N900U1-1G

Part Number
NDD60N900U1-1G
Manufacturer/Brand
ON Semiconductor
Description
MOSFET N-CH 600V 5.9A IPAK-4
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
6406pcs Stock Available.

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Product Specifications

Part Number NDD60N900U1-1G
Description MOSFET N-CH 600V 5.9A IPAK-4
Manufacturer ON Semiconductor
Series -
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 900 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 50V
FET Feature -
Power Dissipation (Max) 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

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