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Product Introduction
SISH615ADN-T1-GE3
- Part Number
- SISH615ADN-T1-GE3
- Manufacturer/Brand
- Vishay Siliconix
- Description
- MOSFET P-CHAN 20 V POWERPAK 1212
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- TrenchFET® Gen III
- Quantity
- 3173pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | SISH615ADN-T1-GE3 |
| Description | MOSFET P-CHAN 20 V POWERPAK 1212 |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® Gen III |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 22.1A (Ta), 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.4 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 183nC @ 10V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 5590pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8SH |
| Package / Case | PowerPAK® 1212-8SH |
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