Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SUD09P10-195-GE3
Part Number | SUD09P10-195-GE3 |
Datasheet | SUD09P10-195-GE3 datasheet |
Description | MOSFET P-CH 100V 8.8A DPAK |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 8.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 195 mOhm @ 3.6A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 34.8nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1055pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 32.1W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |