
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JANS2N3499L/TR

| Part Number | JANS2N3499L/TR | 
| Datasheet | JANS2N3499L/TR datasheet | 
| Description | SMALL-SIGNAL BJT | 
| Manufacturer | Microsemi Corporation | 
| Series | Military, MIL-PRF-19500/366 | 
| Part Status | Active | 
| Transistor Type | NPN | 
| Current - Collector (Ic) (Max) | 500mA | 
| Voltage - Collector Emitter Breakdown (Max) | 100V | 
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA | 
| Current - Collector Cutoff (Max) | 10µA (ICBO) | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V | 
| Power - Max | - | 
| Frequency - Transition | - | 
| Operating Temperature | -65°C ~ 200°C (TJ) | 
| Mounting Type | Through Hole | 
| Package / Case | TO-205AA, TO-5-3 Metal Can | 
| Supplier Device Package | TO-5 |