Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JANS2N3499L/TR
Part Number | JANS2N3499L/TR |
Datasheet | JANS2N3499L/TR datasheet |
Description | SMALL-SIGNAL BJT |
Manufacturer | Microsemi Corporation |
Series | Military, MIL-PRF-19500/366 |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
Current - Collector Cutoff (Max) | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
Power - Max | - |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AA, TO-5-3 Metal Can |
Supplier Device Package | TO-5 |