Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI4435DYTR
Product Introduction
SI4435DYTR
- Part Number
- SI4435DYTR
- Manufacturer/Brand
- Infineon Technologies
- Description
- MOSFET P-CH 30V 8A 8-SOIC
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- HEXFET®
- Quantity
- 4827pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | SI4435DYTR |
| Datasheet | SI4435DYTR datasheet |
| Description | MOSFET P-CH 30V 8A 8-SOIC |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2320pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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