Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / NE856M03-A

Product Introduction

NE856M03-A

Part Number
NE856M03-A
Manufacturer/Brand
CEL
Description
RF TRANS NPN 12V 4.5GHZ 3MINMOLD
Category
Transistors - Bipolar (BJT) - RF
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
2765pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number NE856M03-A
Datasheet NE856M03-A datasheet
Description RF TRANS NPN 12V 4.5GHZ 3MINMOLD
Manufacturer CEL
Series -
Part Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 4.5GHz
Noise Figure (dB Typ @ f) 1.4dB ~ 2.5dB @ 1GHz
Gain -
Power - Max 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 7mA, 3V
Current - Collector (Ic) (Max) 100mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-623F
Supplier Device Package 3-SuperMiniMold (M03)

Latest Products for Transistors - Bipolar (BJT) - RF

MS2200

Microsemi Corporation

RF TRANS NPN 65V 500MHZ M102

MS2200A

Microsemi Corporation

RF POWER TRANSISTOR

MS2201

Microsemi Corporation

RF TRANS NPN 45V 1.15GHZ M220

MS2202

Microsemi Corporation

RF TRANS NPN 3.5V 1.15GHZ M115

MS2203

Microsemi Corporation

RF TRANS NPN 20V 1.09GHZ M220

MS2204

Microsemi Corporation

RF TRANS NPN 20V 1.09GHZ M115