Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / F1T6GHA1G
Part Number | F1T6GHA1G |
Datasheet | F1T6GHA1G datasheet |
Description | DIODE GEN PURP 800V 1A TS-1 |
Manufacturer | Taiwan Semiconductor Corporation |
Series | Automotive, AEC-Q101 |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 800V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 1.3V @ 1A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 500ns |
Current - Reverse Leakage @ Vr | 5µA @ 800V |
Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
Mounting Type | Through Hole |
Package / Case | T-18, Axial |
Supplier Device Package | TS-1 |
Operating Temperature - Junction | -55°C ~ 150°C |