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Part Number | 1N8026-GA |
Datasheet | 1N8026-GA datasheet |
Description | DIODE SILICON 1.2KV 8A TO257 |
Manufacturer | GeneSiC Semiconductor |
Series | - |
Part Status | Obsolete |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 1200V |
Current - Average Rectified (Io) | 8A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.6V @ 2.5A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0ns |
Current - Reverse Leakage @ Vr | 10µA @ 1200V |
Capacitance @ Vr, F | 237pF @ 1V, 1MHz |
Mounting Type | Through Hole |
Package / Case | TO-257-3 |
Supplier Device Package | TO-257 |
Operating Temperature - Junction | -55°C ~ 250°C |