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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIHG64N65E-GE3
Part Number | SIHG64N65E-GE3 |
Datasheet | SIHG64N65E-GE3 datasheet |
Description | MOSFET N-CH 650V 64A TO247AC |
Manufacturer | Vishay Siliconix |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 47 mOhm @ 32A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 369nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 7497pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 520W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AC |
Package / Case | TO-247-3 |