Product Introduction
Images are for reference only
See Product Specifications
Product Specifications
Part Number |
EPC2021 |
Datasheet |
EPC2021 datasheet |
Description |
GANFET TRANS 80V 90A BUMPED DIE |
Manufacturer |
EPC |
Series |
eGaN® |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
80V |
Current - Continuous Drain (Id) @ 25°C |
90A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
5V |
Rds On (Max) @ Id, Vgs |
2.5 mOhm @ 29A, 5V |
Vgs(th) (Max) @ Id |
2.5V @ 14mA |
Gate Charge (Qg) (Max) @ Vgs |
15nC @ 5V |
Vgs (Max) |
+6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds |
1650pF @ 40V |
FET Feature |
- |
Power Dissipation (Max) |
- |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
Die |
Package / Case |
Die |
Latest Products for Transistors - FETs, MOSFETs - Single
ON Semiconductor
MOSFET N-CH 30V 17.5A 8MLP
ON Semiconductor
MOSFET N-CH 100V 3.3A 8-MLP
ON Semiconductor
MOSFET N-CH 100V 57A 8PQFN
ON Semiconductor
MOSFET N-CH 100V 4A POWER33
ON Semiconductor
MOSFET N-CH 30V 9.6A POWER33
ON Semiconductor
MOSFET P-CH 60V 5.7A POWER33