
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIS439DNT-T1-GE3

| Part Number | SIS439DNT-T1-GE3 |
| Datasheet | SIS439DNT-T1-GE3 datasheet |
| Description | MOSFET P-CH 30V 50A 1212-8 |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 11 mOhm @ 14A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2135pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 52.1W (Tc) |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8S (3.3x3.3) |
| Package / Case | PowerPAK® 1212-8S |