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| Part Number | TPAR3J S1G |
| Datasheet | TPAR3J S1G datasheet |
| Description | DIODE AVALANCHE 600V 3A TO277A |
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | - |
| Part Status | Active |
| Diode Type | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 1.55V @ 3A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 120ns |
| Current - Reverse Leakage @ Vr | 10µA @ 600V |
| Capacitance @ Vr, F | 58pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-277, 3-PowerDFN |
| Supplier Device Package | TO-277A (SMPC) |
| Operating Temperature - Junction | -55°C ~ 175°C |