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Product Introduction

SIS612EDNT-T1-GE3

Part Number
SIS612EDNT-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET N-CH 20V 50A SMT
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET®
Quantity
8716pcs Stock Available.

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Product Specifications

Part Number SIS612EDNT-T1-GE3
Datasheet SIS612EDNT-T1-GE3 datasheet
Description MOSFET N-CH 20V 50A SMT
Manufacturer Vishay Siliconix
Series TrenchFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 3.9 mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 2060pF @ 10V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S (3.3x3.3)
Package / Case PowerPAK® 1212-8S

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