Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / IXYH100N65C3
Part Number | IXYH100N65C3 |
Datasheet | IXYH100N65C3 datasheet |
Description | IGBT 650V 200A 830W TO247 |
Manufacturer | IXYS |
Series | GenX3™, XPT™ |
Part Status | Active |
IGBT Type | PT |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 200A |
Current - Collector Pulsed (Icm) | 420A |
Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 70A |
Power - Max | 830W |
Switching Energy | 2.15mJ (on), 840µJ (off) |
Input Type | Standard |
Gate Charge | 164nC |
Td (on/off) @ 25°C | 28ns/106ns |
Test Condition | 400V, 50A, 3 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 (IXYH) |