Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / 2SK2221-E

Product Introduction

2SK2221-E

Part Number
2SK2221-E
Manufacturer/Brand
Renesas Electronics America
Description
MOSFET N-CH 200V 8A TO-3P
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
5690pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number 2SK2221-E
Description MOSFET N-CH 200V 8A TO-3P
Manufacturer Renesas Electronics America
Series -
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 10V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3

Latest Products for Transistors - FETs, MOSFETs - Single

RQ3E130MNTB1

Rohm Semiconductor

MOSFET N-CH 30V 13A HSMT8

RQ3E150GNTB

Rohm Semiconductor

MOSFET N-CH 30V 15A 8-HSMT

RQ3E180GNTB

Rohm Semiconductor

MOSFET N-CH 30V 18A 8-HSMT

RQ3E070BNTB

Rohm Semiconductor

MOSFET N-CH 30V 7A HSMT8

RQ3E080BNTB

Rohm Semiconductor

MOSFET N-CH 30V 8A HSMT8

RQ3E080GNTB

Rohm Semiconductor

MOSFET N-CH 30V 8A 8-HSMT