Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FDP4D5N10C
Part Number | FDP4D5N10C |
Datasheet | FDP4D5N10C datasheet |
Description | FET ENGR DEV-NOT REL |
Manufacturer | ON Semiconductor |
Series | PowerTrench® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 128A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 4V @ 310µA |
Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 5065pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 2.4W (Ta), 150W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |