Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIR800ADP-T1-GE3
Part Number | SIR800ADP-T1-GE3 |
Description | MOSFET N-CH 20V PPAK SO-8 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® Gen IV |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 50.2A (Ta), 177A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.35 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
Vgs (Max) | +12V, -8V |
Input Capacitance (Ciss) (Max) @ Vds | 3415pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 5W (Ta), 62.5W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® SO-8 |
Package / Case | PowerPAK® SO-8 |