Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / QS8M12TCR
Part Number | QS8M12TCR |
Datasheet | QS8M12TCR datasheet |
Description | MOSFET N/P-CH 30V 4A TSMT8 |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Not For New Designs |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4A |
Rds On (Max) @ Id, Vgs | 42 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 3.4nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 10V |
Power - Max | 1.5W |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Supplier Device Package | TSMT8 |