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Product Introduction

SISS06DN-T1-GE3

Part Number
SISS06DN-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET N-CHAN 30 V POWERPAK 1212
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET® Gen IV
Quantity
31pcs Stock Available.

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Product Specifications

Part Number SISS06DN-T1-GE3
Description MOSFET N-CHAN 30 V POWERPAK 1212
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 47.6A (Ta), 172.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.38 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3660pF @ 15V
FET Feature -
Power Dissipation (Max) 5W (Ta), 65.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S

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