Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / APT35GP120BG

Product Introduction

APT35GP120BG

Part Number
APT35GP120BG
Manufacturer/Brand
Microsemi Corporation
Description
IGBT 1200V 96A 543W TO247
Category
Transistors - IGBTs - Single
RoHs Status
Lead free / RoHS Compliant
Series
POWER MOS 7®
Quantity
211pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number APT35GP120BG
Datasheet APT35GP120BG datasheet
Description IGBT 1200V 96A 543W TO247
Manufacturer Microsemi Corporation
Series POWER MOS 7®
Part Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 96A
Current - Collector Pulsed (Icm) 140A
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 35A
Power - Max 543W
Switching Energy 750µJ (on), 680µJ (off)
Input Type Standard
Gate Charge 150nC
Td (on/off) @ 25°C 16ns/94ns
Test Condition 600V, 35A, 5 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 [B]

Latest Products for Transistors - IGBTs - Single

RJH60D5BDPQ-E0#T2

Renesas Electronics America

IGBT 600V 75A 200W TO-247

RJH60F6BDPQ-A0#T0

Renesas Electronics America

IGBT 600V 85A 297.6W TO-247A

RJH60F6DPQ-A0#T0

Renesas Electronics America

IGBT 600V 85A 297.6W TO247A

RJH1BF6RDPQ-80#T2

Renesas Electronics America

IGBT 1100V 55A 227.2W TO247

RJH1BF7RDPQ-80#T2

Renesas Electronics America

IGBT 1100V 60A 250W TO247

RJH1CF4RDPQ-80#T2

Renesas Electronics America

IGBT 1200V 40A 156.2W TO247