
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TPW1R005PL,L1Q

| Part Number | TPW1R005PL,L1Q |
| Datasheet | TPW1R005PL,L1Q datasheet |
| Description | X35 PB-F POWER MOSFET TRANSISTOR |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSIX-H |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 45V |
| Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 122nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9600pF @ 22.5V |
| FET Feature | - |
| Power Dissipation (Max) | 960mW (Ta), 170W (Tc) |
| Operating Temperature | 175°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DSOP Advance |
| Package / Case | 8-PowerVDFN |