
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / PMFPB8032XP,115

| Part Number | PMFPB8032XP,115 |
| Datasheet | PMFPB8032XP,115 datasheet |
| Description | MOSFET P-CH 20V 2.7A HUSON6 |
| Manufacturer | Nexperia USA Inc. |
| Series | - |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Rds On (Max) @ Id, Vgs | 102 mOhm @ 2.7A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 4.5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 485mW (Ta), 6.25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-HUSON-EP (2x2) |
| Package / Case | 6-UDFN Exposed Pad |