Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPD042P03L3GBTMA1
Part Number | IPD042P03L3GBTMA1 |
Datasheet | IPD042P03L3GBTMA1 datasheet |
Description | MOSFET P-CH 30V 70A TO252-3 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Discontinued at Digi-Key |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 70A, 10V |
Vgs(th) (Max) @ Id | 2V @ 270µA |
Gate Charge (Qg) (Max) @ Vgs | 175nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 12400pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |