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Part Number | SIRA50ADP-T1-RE3 |
Datasheet | SIRA50ADP-T1-RE3 datasheet |
Description | MOSFET N-CHAN 40V PPAK SO-8 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® Gen IV |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 54.8A (Ta), 219A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.04 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
Vgs (Max) | +20V, -16V |
Input Capacitance (Ciss) (Max) @ Vds | 7300pF @ 20V |
FET Feature | - |
Power Dissipation (Max) | 6.25W (Ta), 100W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® SO-8 |
Package / Case | PowerPAK® SO-8 |