Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFL024N
Part Number | IRFL024N |
Datasheet | IRFL024N datasheet |
Description | MOSFET N-CH 55V 2.8A SOT223 |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 75 mOhm @ 2.8A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18.3nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223 |
Package / Case | TO-261-4, TO-261AA |