Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQB8N60CTM-WS
Part Number | FQB8N60CTM-WS |
Datasheet | FQB8N60CTM-WS datasheet |
Description | MOSFET N-CH 600V 7.5A |
Manufacturer | ON Semiconductor |
Series | QFET® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 3.75A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1255pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 147W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |