Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSC085N025S G
Part Number | BSC085N025S G |
Datasheet | BSC085N025S G datasheet |
Description | MOSFET N-CH 25V 35A TDSON-8 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 8.5 mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id | 2V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 52W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |