Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN1427TE85LF
Product Introduction
RN1427TE85LF
- Part Number
- RN1427TE85LF
- Manufacturer/Brand
- Toshiba Semiconductor and Storage
- Description
- TRANS PREBIAS NPN 200MW SMINI
- RoHs Status
- Lead free / RoHS Compliant
- Series
- -
- Quantity
- 11pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | RN1427TE85LF |
| Datasheet | RN1427TE85LF datasheet |
| Description | TRANS PREBIAS NPN 200MW SMINI |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Part Status | Active |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 800mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 100mA, 1V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 300MHz |
| Power - Max | 200mW |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | S-Mini |
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