Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / IGB03N120H2ATMA1
Part Number | IGB03N120H2ATMA1 |
Datasheet | IGB03N120H2ATMA1 datasheet |
Description | IGBT 1200V 9.6A 62.5W TO263-3 |
Manufacturer | Infineon Technologies |
Series | - |
Part Status | Not For New Designs |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 9.6A |
Current - Collector Pulsed (Icm) | 9.9A |
Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 3A |
Power - Max | 62.5W |
Switching Energy | 290µJ |
Input Type | Standard |
Gate Charge | 22nC |
Td (on/off) @ 25°C | 9.2ns/281ns |
Test Condition | 800V, 3A, 82 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | PG-TO263-3 |